by National Aeronautics and Space Administration, Scientific and Technical Information Branch, For sale by the National Technical Information Service] in Washington, D.C, [Springfield, Va .
Written in English
|Statement||David W. Almgren and Katinka I. Csigi ; prepared for Langley Research Center.|
|Series||NASA contractor report -- NASA CR-3361.|
|Contributions||Csigi, Katlinka I., 1949-, United States. National Aeronautics and Space Administration. Scientific and Technical Information Branch., Langley Research Center.|
|The Physical Object|
|Pagination||vi, 54 p. :|
|Number of Pages||54|
This interest arises primarily for three reasons. First, the bandgap of eV at K is very nearly ideal for a photovoltaic device operating in our solar spectrum. Second, GaAs solar cells should be capable of operating at higher temperatures than silicon (Si) cells. Third, GaAs solar cells are expected to be very radiation by: work was concerned with a production rate of 10,, 1 cm2 (AlGa)As/GaAs solar cells per day of which cm2 were space qualified cells. The production goal assumed for the current study was the fabrication of enough single crystal, gallium arsenide solar cells to support the launch of one W, space-qualified, solar cell. Gaalas/Gaas Solar Cell Process Study. By K. I. Csigi and D. W. Almgren. Abstract. Available information on liquid phase, vapor phase (including chemical vapor deposition) and molecular beam epitaxy growth procedures that could be used to fabricate single crystal, heteroface, (AlGa) As/GaAs solar cells, for space applications is summarized. A Author: K. I. Csigi and D. W. Almgren. In the presence of these deep level defects, the electron-hole pairs generated in the vicinity of the intrinsic region of a solar cell can be still collected as diffusion current, but the collection efficiency may not be as high as the one from the depletion region. In this paper, we study on heterojunction pin solar cell device based on GaAsBi. Considering of the midgap trap level found by DLTS, we apply Cited by: 1.
They have already been studied extensively, and rapidly became a reference system for thin film solar cells. To investigate the pros and cons of a novel hyperspectral imaging platform based on volume Bragg gratings, researchers at IRDEP (Institute of Research and Development on Photovoltaic Energy) have characterized GaAs solar cells using the. The growth parameters including growth temperature, V/III, and doping densities were varied to study the lifetime degradation mechanisms in the GaAs solar cell. The GaAs thin-film solar cell is a top contender in the thin-film solar cell market in that it has a high power conversion efficiency (PCE) compared to that of other thin-film solar by: Advantage of GaAs solar cells. High conversion rate. According to Fullsuns ©, their current “GaAs GaAs Solar Cell Technology” has a maximum conversion rate of %, and this value has been recognized by the National Renewable Energy Laboratory (NREL) as the world's number one conversion rate.
The electrical performance of GaAs solar cells was characterized as a function of irradiation with protons and electrons with the underlying goal of producing solar cells suitable for use in space. between 50 keV and 10 MeV, and damage coefficients were derived for liquld phase epitaxy GaAs solar cells. MeV. Proton energies used variedFile Size: 2MB. a single cell. The processing of polycrystalline Si solar cells is more economical, which are produced by cooling a graphite mold filled containing molten silicon. Polycrystalline Si solar cells are currently the most popular so-lar cells. They are believed to occupy most up to 48% of the solar cell production worldwide during .File Size: 1MB. Solar Information Module Published February • This book presents a nonmathematical explanation of the theory and design of PV solar cells and systems. It is written to address several audiences: engineers and scientists who desire anintroduction to the field of photovoltaics, students interestedinPV scienceandtechnology, andend. Thin Film Solar Cells • A thin film of semiconductor is deposited by low cost methods. • Less material is usedLess material is used. • Cells can be flexible and integrated directly into roofing material. Metal N-type CdS P-type CdTe 3~8 um um Glass Superstrate Transparent Conducting Oxide um .